MIXA600PF650TSF tentative phase leg + free wheeling diodes + ntc xpt igbt module 5 6 4 1 2 8 7 10/11 3 9 part number MIXA600PF650TSF backside: isolated c25 ce(sat) vv 1.65 ces 720 650 = v= v i= a 2x features / advantages: applications: package: high level of integration - only one power semiconductor module required for the whole drive rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) temperature sense included sonic? diode - fast and soft reverse recovery - low operating forward voltage ac motor drives pumps, fans air-conditioning system inverter and power supplies ups simbus f industry standard outline rohs compliant soldering pins for pcb mounting height: 17 mm base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3000 ixys reserves the right to change limits, conditions and dimensions. 20121107 data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
MIXA600PF650TSF tentative -di /dt = a/s t = c v ces v 650 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 720 a c vj symbol definition ratings typ. max. min. conditions unit 490 v v ce(sat) total power dissipation 1750 w collector emitter leakage current 5.5 v turn-on delay time 30 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 1200 30 t = c t = c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v cge t = 25c vj v ge(th) i ces i = ma; v = v cgece v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 1.8 1.85 4.8 4 ma 2 ma 1.8 1.5 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 840 nc t t t e e d(on) r d(off) f on off 50 ns 100 ns 40 ns 6 mj 22.8 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cemax 650 short circuit safe operating area s scsoa 10 t = c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g 2400 a r thjc thermal resistance junction to case 0.085 k/w v rrm v 650 max. repetitive reverse voltage t = 25c vj t = 25c forward current a 490 a c 340 t = c c i f25 i f t = 25c forward voltage v 1.90 v vj 1.70 t = 125c vj v f i = a f t = 25c reverse current ma * ma vj * t = 125c vj i r r rrm t = 125c vj q i t rr rm rr tbd c tbd a tbd ns reverse recovery charge max. reverse recovery current reverse recovery time v = i = a; v = 0 v f fge e rec tbd mj reverse recovery energy r r thjc thermal resistance junction to case 0.095 k/w v = v t = 25c c t = 25c vj t = c vj vj 600 9.6 600 600 600 600 1.3 1.3 1.3 300 360 0 300 i cm 1.65 r thch thermal resistance case to heatsink 0.05 k/w r thch thermal resistance case to heatsink 0.04 k/w * not applicable, see ices value above igbt diode 300 v v = v cemax 650 80 80 80 80 150 150 150 150 150 a ixys reserves the right to change limits, conditions and dimensions. 20121107 data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
MIXA600PF650TSF tentative ratings xxx xx-xxxxx yywwx 2d data matrix logo ul part number date code location i x m a 600 pf 650 t sf part number igbt xpt igbt gen 1 / std phase leg + free wheeling diodes thermistor \ temperature sensor simbus f module = = = = = current rating [a] reverse voltage [v] = = = = package t vj c m d nm 6 mounting torque 3 t stg c 125 storage temperature -40 weight g 350 symbol definition typ. max. min. conditions virtual junction temperature unit m t nm 6 terminal torque 3 v v t = 1 second v t = 1 minute isolation voltage mm mm 12.7 10.0 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current a per terminal 175 -40 terminal to terminal simbus f delivery mode quantity code no. part number marking on product ordering 0 25 50 75 100 125 150 10 2 10 3 10 4 10 5 r [ ] typ. ntc resistance vs. temperature t c [c] 50/60 hz, rms; i 1 ma isol MIXA600PF650TSF 513794 box 3 MIXA600PF650TSF standard r pin-chip resistance pin to chip 0.65 m ? 2500 3000 isol v = v cesat + 2 r i c resp. v = v f + 2 r i f threshold voltage v m ? v 0 max r 0 max slope resistance * 1.1 1.8 1.21 1 equivalent circuits for simulation t = vj i v 0 r 0 igbt diode 175 c * on die level t = 25 resistance k ? 5.25 k vj 3375 r 25 b 25/50 5 4.75 temperature coefficient symbol definition typ. max. min. conditions unit temperature sensor ntc ixys reserves the right to change limits, conditions and dimensions. 20121107 data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
MIXA600PF650TSF tentative 1,2 1 7 2 0 , 5 2 2 5 0 5 7 , 5 6 2 94,5 110 122 137 152 0 , 8 r2,5 0 7 , 2 5 1 1 , 0 6 3 3 , 9 2 3 7 , 7 3 6 0 , 5 9 6 4 , 4 8 7 , 2 6 7 , 7 5 0 3,75 57,96 0,46 10 11 98 7 6 5 1 2 4 3 5 6 4 1 2 8 7 10/11 3 9 outlines simbus f ixys reserves the right to change limits, conditions and dimensions. 20121107 data according to iec 60747and per semiconductor unless otherwise specified ? 2012 ixys all rights reserved
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